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- E-ISSN 2288-8985
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Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
2001, v.14 no.6, pp.486-493
Kim,
J. N., Lee,
S. U., Kwun,
H. D., Shin,
K. S., Chon,
U., Park,
B. O., &
Cho,
S.
H.
(2001). Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film. Analytical Science and Technology, 14(6), 486-493.
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Abstract
The effect of SIMS analysis conditions such as mesh grid, offset voltage and ion species on the in-depth profile for bismuth titanate thin film was examined in terms of charging effect and detection limit. The results shows that the use of offset voltage -40 V reduces the charging effect and the detection limit. The employment of mesh grid in sample preparation leads to the reduction of the charging effect in small amount, but deteriorate the detection limit. Utilization of primary <TEX>$O^-$</TEX> ion for SIMS analysis of bismuth titanate thin film showed almost the same effect as using offset voltage -40 V. However, it takes approximately triple acquisition time than using <TEX>$O_2{^+}$</TEX> ion due to the poor beam current of the source in the experiment.
- keywords
- SIMS, bismuth titanate, FRAM, charging effect, depth profile
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