Journal of The Korea Internet of Things Society
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- P-ISSN2799-4791
- KCI
An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory
Abstract
SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.
- keywords
- 메모리, 낸드 플래시 메모리, 다중 비트 셀, 단일 비트 셀, 수명, memory, nand flash memory, multi level cell, single level cell, lifetime
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