ACOMS+ 및 학술지 리포지터리 설명회

  • 한국과학기술정보연구원(KISTI) 서울분원 대회의실(별관 3층)
  • 2024년 07월 03일(수) 13:30
 

  • P-ISSN2233-4203
  • E-ISSN2093-8950
  • ESCI, SCOPUS, KCI

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  • P-ISSN 2233-4203
  • E-ISSN 2093-8950

Boron Detection Technique in Silicon Thin Film Using Dynamic Time of Flight Secondary Ion Mass Spectrometry

Mass Spectrometry Letters / Mass Spectrometry Letters, (P)2233-4203; (E)2093-8950
2021, v.12 no.1, pp.26-30
https://doi.org/10.5478/MSL.2021.12.1.26
M. Abul Hossion (Department of Physics, BSMR Maritime University)
Brij M. Arora (Department of Physics, University of Mumbai)
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Abstract

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 10 1 ~10 4 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done fol-lowing standard relative sensitivity factor. The concentration of boron in silicon was determined 10 17 ~10 21 atoms/cm 3 . The tech-nique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

keywords
ToF-SIMS, HWCVD, boron concentration, p-type silicon, RSF, thin film.


투고일Submission Date
2021-03-05
수정일Revised Date
2021-03-25
게재확정일Accepted Date
2021-03-25
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Mass Spectrometry Letters