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Effect of NaBH4 and HCI on signal intensity of As,Se,Ge with on-line hydride generation system and E-O-V ICP-AES
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
2002, v.15 no.5, pp.439-444
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(2002). Effect of NaBH4 and HCI on signal intensity of As,Se,Ge with on-line hydride generation system and E-O-V ICP-AES. Analytical Science and Technology, 15(5), 439-444.
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Abstract
DE-O-V ICP-AES has been studied for the analytical characteristics of As, Se, and Ge with PN, USN and HG. Effect of <TEX>$NaBH_4$</TEX> and HCl on the signal intensity of As, Se and Ge with HG and E-O-V ICP-AES were closely investigated. The sensitivities of As, Se and Ge with HG were much greater than those with PN and USN. Accordingly, the detection limits of the elements with HG were lower by a factor of 100 and 10 than PN and USN, respectively.
- keywords
- hydride generator, end-on-view ICP-AES, PN, USN
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