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- E-ISSN 2288-8985
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Effect of oxidants and additives on the polishing performance in tungsten CMP slurry
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
2006, v.19 no.5, pp.394-399
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(2006). Effect of oxidants and additives on the polishing performance in tungsten CMP slurry. Analytical Science and Technology, 19(5), 394-399.
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Abstract
The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.
- keywords
- CMP
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