- P-ISSN 1225-0163
- E-ISSN 2288-8985
- P-ISSN1225-0163
- E-ISSN2288-8985
- SCOPUS, ESCI, KCI
Article Detail
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SIMS analysis of the behavior of boron implanted into single silicon during the Ti-silicide formation
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
1992, v.5 no.2, pp.199-202
Hwang,
Y. S., Paek,
S. H., Cho,
H. C., Mah,
J. P., Choi,
J. S., &
Kang,
S.
G.
(1992). SIMS analysis of the behavior of boron implanted into single silicon during the Ti-silicide formation. , 5(2), 199-202.
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Abstract
Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that <TEX>$BF_2$</TEX> were introduced into. Implant energies of <TEX>$BF_2$</TEX> were 50keV and 90keV. The behavior of boron was investigated by SIMS. The redistribution of boron occurred during the formation of Ti-silicide by metal-Ti target and the sample implanted at the energy of 50keV showed severe out-diffusion. In the case that Ti-silicide was formed by composite target, there was little redistribution of boron.
- keywords
- Titanium silicide, SIMS, silicon substrate
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