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- E-ISSN 2288-8985
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Initial Reactions of Ti on the Atomically Clean Si Substrates
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
1992, v.5 no.3, pp.303-308
Jeon,
H., &
Nemanich,
R.
(1992). Initial Reactions of Ti on the Atomically Clean Si Substrates. Analytical Science and Technology, 5(3), 303-308.
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Abstract
Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed <TEX>$7{\times}7$</TEX> Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures(<TEX>$200^{\circ}C{\sim}300^{\circ}C$</TEX>) intermixing of Ti and Si is detected by AES. Substrate <TEX>$1{\times}1$</TEX> LEED patterns are displayed after <TEX>$400^{\circ}C$</TEX> anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the <TEX>$7{\times}7$</TEX> LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.
- keywords
- Surface roughness, Reconstruction, Disordered layer
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