- P-ISSN 1225-0163
- E-ISSN 2288-8985
- P-ISSN1225-0163
- E-ISSN2288-8985
- SCOPUS, ESCI, KCI
Article Detail
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Micro Raman Spectroscopic Analysis of Local Stress on Silicon Surface in Semiconductor Fabrication Process
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
1992, v.5 no.4, pp.359-366
Son,
M. Y., Jung,
J. K., Park,
J. S., &
Kang,
S.
C.
(1992). Micro Raman Spectroscopic Analysis of Local Stress on Silicon Surface in Semiconductor Fabrication Process. Analytical Science and Technology, 5(4), 359-366.
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Abstract
Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has <TEX>$0.45{\mu}m$</TEX> in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.
- keywords
- microstress on silicon surface, micro-Raman spectrometry
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