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Fourier Transform Infrared Spectroscopic Analysis of the Silylated Resist on Silicon Wafers in Semiconductor Lithographic Process
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
1992, v.5 no.4, pp.455-464
Kang,
S. C., Kim,
S. J., Son,
M. Y., &
Park,
C.
G.
(1992). Fourier Transform Infrared Spectroscopic Analysis of the Silylated Resist on Silicon Wafers in Semiconductor Lithographic Process. Analytical Science and Technology, 5(4), 455-464.
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Abstract
Using FT-IR, we determined the depth of silylated layers produced from various gas-phase-silylation conditions was proposed by using Fourier Transform Infrared (FT-IR) spectroscopic analysis. The depth of silylated layer was determined from absorbance measurments of the significant peaks (Si-O-ph, Si-C, Si-H) of FT-IR spectra with background spectrum subtraction method. And the results were compared with thickness measurments of SEM. The results were well agree with SEM. It found to be well suited for determining silylation process window.
- keywords
- silylation, FT-IR, gas phase silylation
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