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Single crystal growth of ZnWO4 by the Czochralski method and characterization
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
2010, v.23 no.2, pp.103-108
https://doi.org/10.5806/AST.2010.23.2.103
(2010). Single crystal growth of ZnWO4 by the Czochralski method and characterization. Analytical Science and Technology, 23(2), 103-108, https://doi.org/10.5806/AST.2010.23.2.103
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Abstract
Czochralski법에 의한 ZnWO4 단결정을 [100], [010], [001] 방향으로 성공적으로 성장시켰다. ZnWO4 단결정 성장을 위한 종자결정은 백금 침을 사용하여 용융액으로부터 모세관 현상을 응용한 결정성장으로 얻을 수 있었다. 각 축 방향에 따른 성장조건이 rotation speed, pulling rate, 성장된 결정의 직경등의 변수를 가지고 조사되어졌다. 성장된 결정의 냉각시 발생되는 균열을 annealing 효과에 의하여 방지할 수 있었다. 성장된 결정의 방위는 Laue back reflection으로 결정하였다. 각 축 방향으로 성장된 결정의 미세구조적 특징이 논하여졌으며, 경도, 열팽창계수 및 유전상수의 물리적 특성이 평가되어졌다.
- keywords
- <TEX>$ZnWO_4$</TEX> single crystals, Czochralski method, growth conditions, physical properties
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