• P-ISSN1225-0163
  • E-ISSN2288-8985
  • SCOPUS, ESCI, KCI

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  • P-ISSN 1225-0163
  • E-ISSN 2288-8985

Article Contents

    Enhanced Photoelectrochemical Behavior of Gold-coated Porous n-Si Electrochemically Modified with Polyaniline

    Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
    1995, v.8 no.4, pp.637-642
    Park, Soo-Jin
    Chae, Won-Seok
    Kim, Kang-Jin
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    Abstract

    The presence of a porous Si layer(PSL) formed on the surface of crystalline silicon by electrochemical etclling in HF solution is found to enhance the stability of n-Si photoanodes, but porous n-Si thus formed is still liable to corrode upon exposure to excitation light. To improve the stability of the porous n-Si electrodes and to reduce the photo-induced corrosion, we have examined the PEC behavior of porous n-Si modified with polyaniline(PANI) and 3 nm thick layer of Au. Comparisons were made between Au/PSL and PANl/Au/PSL photoelectrodes.

    keywords
    photoelectrochemical(PEC) solar cell, porous n-Si, photocurrent-voltage, polyaniline(PANI)


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