- P-ISSN 1225-0163
- E-ISSN 2288-8985
- P-ISSN1225-0163
- E-ISSN2288-8985
- SCOPUS, ESCI, KCI
Article Detail
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Preparation and Characterization of Doped <TEX>$Fe_2O_3$</TEX> and GaAs Photosemiconductive Electrodes for <TEX>$CO_2$</TEX> Fixation
Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985
1995, v.8 no.4, pp.669-674
Kim,
I. K., Lee,
S. J., Kim,
M. S., Jeong,
S. I., Park,
B. S., &
Kim,
Y.
G.
(1995). Preparation and Characterization of Doped <TEX>$Fe_2O_3$</TEX> and GaAs Photosemiconductive Electrodes for <TEX>$CO_2$</TEX> Fixation. , 8(4), 669-674.
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Abstract
The preparation and characterization of photosemiconductive electrodes of GaAs and of <TEX>$Fe_2O_3$</TEX> doped with MgO or CaO were investigated. The doped <TEX>$Fe_2O_3$</TEX> photosemiconductive electrodes were prepared from thin films sintered at temperatures from 1,100 to <TEX>$1,450^{\circ}C$</TEX>, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure of <TEX>$Fe_2O_3$</TEX> and spinel structure of <TEX>$Mg_xFe_{3-x}O_4$</TEX> or <TEX>$Ca_xFe_{3-x}O_4$</TEX> were analyzed by X-ray diffraction and scanning electron microscopy. The cathodic and anodic photocurrents on these electrodes indicated a critical doping amount of 5-11 wt. %. The photocurrents were enhanced when GaAs electrodes were treated with methylene violet the anodic photo-currents were temporarial enhanced and changed to the cathodic ptotocurrents after the surface was dryed.
- keywords
- Iron oxide, photoelectrochemistry, thin film, GaAs
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